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| inchange semiconductor product specification silicon npn power transistors 2SD2101 description ? with to-220fa package ? darlington applications ? low frequency power amplifier pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector -emitter voltage open base 200 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cp collector current peak 15 a t c =25 ?? 30 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2101 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =50ma; i c =0 7 v v (br)cbo collector-base breakdown voltage i c =0.1ma; i c =0 200 v v (br)ceo collector-emitter breakdown voltage i c =25ma;r be = ?t 200 v v ceo(sus) collector-emitter sustaining voltage i c =5a; l=5mh 170 v v ce(sat-1) collector-emitter saturation voltage i c =5a ;i b =10ma 1.5 v v ce(sat)-2 collector-emitter saturation voltage i c =10a ;i b =100ma 3.0 v v be(sat-1) base-emitter saturation voltage i c =5a ;i b =10ma 2.0 v v be(sat-2) base-emitter saturation voltage i c =10a ;i b =100ma 3.5 v i cbo collector cut-off current v cb =180v; i e =0 10 | a i ceo collector cut-off current v ce =180v; r be = ?t 50 | a h fe dc current gain i c =5a ; v ce =3v 1500 inchange semiconductor product specification 3 silicon npn power transistors 2SD2101 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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